Curtiss-Wright / VMETRO / Micro Memory MM-6710F High Speed Static Memory Module

The MM-6710F is a high-speed static memory module designed for VME/VME64 environments requiring data integrity and consistent read/write performance. Built on SRAM architecture, this Curtiss-Wright module delivers rapid data access for aerospace, defense, and industrial automation systems that cannot tolerate latency or storage failures.

Technical Specifications

Memory Technology: High-Speed Static RAM (SRAM)

Form Factor: VME/VME64 module

Bus Interface: VME and VME64 standards with block transfer support

BLT (256 bytes for VME) and MBLT (2KB for VME64)

Address Selection: Module selection on 1MB boundaries, switch-selectable

Operating Temperature: 0 to +65°C

Storage Temperature: -40 to +85°C

Relative Humidity: 95% without condensation

Data Retention: CMOS NVRAM modules incorporate on-board redundant batteries (lithium or NiCad) supporting up to 3 years retention with lithium cells

Reliability Testing: Modules undergo 48-hour burn-in with memory diagnostics and temperature cycling between 0 and 65°C

Key Features

VMEbus and VME64 compatibility for direct integration into existing architectures

Static memory design eliminates refresh requirements and simplifies system timing

Switch-selectable addressing accommodates flexible memory mapping in multi-module configurations

Block transfer capabilities maximize throughput for high-bandwidth operations

Battery-backed CMOS NVRAM option extends data retention across power cycles

Typical Applications

Aerospace flight instrumentation and telemetry systems

Defense signal processing and radar platforms

Industrial automation controllers and data logging

Real-time embedded systems requiring deterministic memory access

Compatibility & Integration The MM-6710F integrates directly into VMEbus and VME64 backplanes without adapter logic. Switch-configurable address boundaries enable multi-module stacking within a single chassis.